HCS Hall Effect Measurement System:
A Comprehensive Solution for Semiconductor Device Characterization
The HCS Hall Effect Measurement System from Linseis is a state-of-the-art solution for the characterization of semiconductor devices. It can measure a wide range of electric transport properties, including:
- Charge carrier concentration (sheet [1/cm²]/bulk [1/cm³])
- Hall constant [cm³/C]
- Hall mobility [cm²/Vs]
- Sheet resistance [Ω]
- Resistivity [Ωcm]
- Conductivity [S/cm]
- Alpha (horizontal/vertical ratio of resistance)
- Magnetoresistance
- Seebeck coefficient [μV/K]
This information can be used to improve device performance, reduce development costs, and enhance reliability.
The HCS Hall Effect Measurement System is available in three models: HCS 1, HCS 10, and HCS 100. Each model offers different features and capabilities, so you can choose the one that best meets your needs.
The HCS Hall Effect Measurement System is available in three models: HCS 1, HCS 10, and HCS 100. Each model offers different features and capabilities, so you can choose the one that best meets your needs.
Permanent magnet option (HCS 1)
The HCS 1 is the most basic model in the HCS series. It is equipped with two permanent magnets and can measure all of the same electric transport properties as the other models. The HCS 1 is a good choice for general-purpose semiconductor device characterization.
Electromagnet option (HCS 10)
The HCS 10 is an upgrade from the HCS 1. It features an electromagnet in addition to the permanent magnets, which allows for more precise magnetic field control. The power supply can apply currents of up to 75 A, resulting in a variable magnetic field strength of up to +/-1 T. The HCS 10 is a good choice for semiconductor device characterization applications that require a high level of accuracy.
Halbach option (HCS 100)
The HCS 100 is the most advanced model in the HCS series. It features a Halbach magnet, which provides a more uniform magnetic field than the permanent magnets or electromagnet used in the other models. The HCS 100 is a good choice for semiconductor device characterization applications that require the highest level of accuracy and precision.
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FEATURES
APPLICATIONS
FEATURES
- Gas tight measurement chamber which allows measurements under defined atmospheres or vacuum conditions
- 120 mm diameter magnets for highest field homogeneity and maximum accuracy as well as biggest measurable sample sizes
- Modular and upgradeable system design
- High temperature version up to 600°C / 873 K
- Illumination option with LED Light source (multiple wavelength)
- Lock-in amplifier upgrade for lowest noise measurements
- Connector for use of external electronics
- Integrated software package for easy handling
- Seebeck Coefficient option to apply on board temperature gradients up to 20K
APPLICATIONS
The HCS Hall Effect Measurement System is used in a wide range of applications, including:
- Semiconductor device characterization
- Measurement of electric transport properties
- Determination of Hall mobility, charge carrier concentration, resistivity, Hall constant, Seebeck coefficient, and more
- Research and development of new semiconductor materials and devices
- Quality control and testing of semiconductor devices
HALL EFFECT ANALYZER
HALL EFFECT ANALYZER